G110N06 Datasheet and Replacement. Cross Reference Search

G110N06 Datasheet (PDF)

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GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) ID @10V (Typ)TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test

..2. Size:1574K goford
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GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features Schematic diagram VDSS RDS(ON) ID @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te

..3. Size:1351K goford
g110n06 to252.pdf pdf_icon

GOFORDG110N06.Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 11055V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz

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g110n06k.pdf pdf_icon

GOFORD G110N06KGeneral Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON)switching applications. Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes