20P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

20P10GOFORDDescription The 20P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features VDS =-100V,ID =-20A Schematic diagram RDS(ON)

GOFORD20P10Description The 20P10 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V -100V 85m -20A20P1020P10 Super high dense cell design Advanced trench process technology

MCU20P10Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering In

CEP20P10/CEB20P10P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-100V, -20A, RDS(ON) =130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

CED20P10/CEU20P10PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -16A, RDS(ON) = 130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING

SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features: Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high tempera

Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod

http://www.ncepower.comNCE20P10JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P10J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -