20P10 Todos los transistores

 ..1. Size:1761K  goford
 20p10 to220.pdf

20P10 GOFORD Description The 20P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features VDS =-100V,ID =-20A Schematic diagram RDS(ON)

 ..2. Size:1179K  goford
 20p10 to251 to252.pdf

GOFORD 20P10 Description The 20P10 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V -100V 85m -20A 20P10 20P10 Super high dense cell design Advanced trench process technology

 0.1. Size:159K  motorola
 mtm20p10.pdf

 0.2. Size:1151K  mcc
 mcu20p10.pdf

MCU20P10 Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering In

 0.3. Size:419K  cet
 cep20p10 ceb20p10.pdf

CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

 0.4. Size:373K  cet
 ced20p10 ceu20p10.pdf

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

 0.5. Size:63K  ssdi
 sff20p10j.pdf

SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high tempera

 0.6. Size:551K  analog power
 am20p10-250d.pdf

Analog Power AM20P10-250D P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11 converters and power management in portable and -100 battery-powered prod

 0.7. Size:637K  ncepower
 nce20p10j.pdf

http //www.ncepower.com NCE20P10J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P10J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -