20P10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 20P10
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 61 nC
Время нарастания (tr): 73 ns
Выходная емкость (Cd): 590 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
Тип корпуса: TO220 TO251 TO252
20P10 Datasheet (PDF)
20p10 to220.pdf
20P10GOFORDDescription The 20P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features VDS =-100V,ID =-20A Schematic diagram RDS(ON)
20p10 to251 to252.pdf
GOFORD20P10Description The 20P10 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V -100V 85m -20A20P1020P10 Super high dense cell design Advanced trench process technology
mcu20p10.pdf
MCU20P10Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering In
cep20p10 ceb20p10.pdf
CEP20P10/CEB20P10P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-100V, -20A, RDS(ON) =130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles
ced20p10 ceu20p10.pdf
CED20P10/CEU20P10PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -16A, RDS(ON) = 130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING
sff20p10j.pdf
SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features: Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high tempera
am20p10-250d.pdf
Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod
nce20p10j.pdf
http://www.ncepower.comNCE20P10JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P10J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -
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