All MOSFET. 20P10 Datasheet

 

20P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 20P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 590 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO220_TO251_TO252

20P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

20P10 Datasheet (PDF)

1.1. sff20p10j.pdf Size:63K _upd-mosfet

20P10
20P10

SFF20P10J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 20 AMP /100 Volts TO-257 200 m P-Channel MOSFET Features: • Rugged construction with polysilicon gate • Low ON-resistance and high transconductance • Excellent high tempera

1.2. am20p10-250d.pdf Size:551K _upd-mosfet

20P10
20P10

Analog Power AM20P10-250D P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω)ID (A) dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11 converters and power management in portable and -100 battery-powered prod

 1.3. cep20p10 ceb20p10.pdf Size:419K _cet

20P10
20P10

CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

1.4. ced20p10 ceu20p10.pdf Size:417K _cet

20P10
20P10

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc

 1.5. 20p10 to251 to252.pdf Size:1179K _goford

20P10
20P10

GOFORD 20P10 Description The 20P10 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features ● Schematic diagram VDSS RDS(ON) ID @ (typ) -10V -100V 85mΩ -20A 20P10 20P10 ● Super high dense cell design ● Advanced trench process technology

1.6. 20p10 to220.pdf Size:1761K _goford

20P10
20P10

20P10 GOFORD Description The 20P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDS =-100V,ID =-20A Schematic diagram RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● R

Datasheet: G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , 2002A , IRFZ44A , 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G , 28N10 .

 
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