22N10 Todos los transistores

 ..1. Size:898K  goford
 22n10.pdf

GOFORD 22N10 Description The 22N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram DSSV RDS(ON)R DI @ 10V (typ) 100V 33m 22A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good

 0.1. Size:364K  fairchild semi
 rfp22n10 rf1s22n10sm.pdf

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs 22A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080 the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse) sizes approaching those of LSI integrated circuits gives optimum utilization of

 0.2. Size:503K  infineon
 ipd122n10n3g.pdf

IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 12.2 mW Excellent gate charge x R product (FOM) DS(on) ID 59 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-fre

 0.3. Size:1551K  cn wxdh
 dse022n10n3 dsg024n10n3.pdf

DSE022N10N3&DSG024N10N3 100V/1.7m /240A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 1.7m RDS(on)typ. TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3V ID Silicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364A ID Package limit 240A

 0.4. Size:847K  belling
 blm22n10-p blm22n10-d.pdf

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS D excellent R , low gate charge. It can be used in a wide R

 0.5. Size:960K  belling
 blp022n10-ba.pdf

BLP022N10 MOSFET Step-Down Converter 1 Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 0.6. Size:1369K  cn agmsemi
 agmh022n10ll.pdf

AGMH022N10LL Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge I Drain Current (A) Vsd Source-Drain Voltage (V) D- Figure 3 Rdson- Drain Current Figure 6 Sourc

 0.7. Size:721K  cn agmsemi
 agmh022n10h.pdf

AGMH022N10H General Description Product Summary The AGMH022N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 2.2m 220A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R

 0.8. Size:242K  inchange semiconductor
 ipd122n10n3.pdf

isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 FEATURES Static drain-source on-resistance RDS(on) 12.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1