GOFORD22N10Description The 22N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram DSSV RDS(ON)R DI @ 10V (typ) 100V 33m 22A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good

RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of

IPD122N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 12.2 mW Excellent gate charge x R product (FOM)DS(on)ID 59 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-fre

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS Dexcellent R , low gate charge. It can be used in a wide R

BLP022N10 MOSFET Step-Down Converter 1Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3FEATURESStatic drain-source on-resistance:RDS(on)12.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1