All MOSFET. 22N10 Datasheet


22N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 22N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO252

22N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


22N10 Datasheet (PDF)

1.1. rfp22n10 rf1s22n10sm.pdf Size:364K _fairchild_semi


RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs • 22A, 100V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.080Ω the MegaFET process. This process, which uses feature • UIS SOA Rating Curve (Single Pulse) sizes approaching those of LSI integrated circuits gives optimum utilization of

1.2. ipd122n10n3g rev2.2.pdf Size:605K _infineon


IPD122N10N3 G TM 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5< >?B=1< <5F5< R 1 m , ?> =1H Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) I Q .5BI B5C9CD1>35 R D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> T

 1.3. ipd122n10n3.pdf Size:242K _inchange_semiconductor


isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

1.4. 22n10.pdf Size:898K _goford


GOFORD 22N10 Description The 22N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram DSSV RDS(ON)R DI @ 10V (typ) 100V 33mΩ 22A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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