30P10A Todos los transistores

 ..1. Size:1592K  goford
 30p10a to252 to251.pdf

GOFORD 30P10A Description The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ) -4.5V -100V 39 m 33 m -30 A Super high dense cell design Advanced trench process technology Re

 ..2. Size:1558K  goford
 30p10a to220.pdf

GOFORD 30P10A Description The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ) -4.5V -100V 39 m 33 m -30 A Super high dense cell design Advanced trench process technology Re

 0.1. Size:1340K  cn agmsemi
 agm30p10a.pdf

AGM30P10A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

 0.2. Size:1845K  cn agmsemi
 agm30p10ap.pdf

AGM30P10AP P- Channel Typical Characteristics -3V TC=25 impulse=250uS -3.5V -4.5V 25 -6V -10V -2.5V Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS= 0V Note TJ=25 VGS=-4.5V 25 VGS=-10V -V F ,Forward Voltage [V] -I D - Drain Current (A) Figure 4. Body Diode Forward Voltage F

 0.3. Size:453K  cn wuxi unigroup
 ttd30p10at ttp30p10at.pdf

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO

 0.4. Size:798K  cn wuxi unigroup
 ttb30p10at ttd30p10at ttp30p10at.pdf

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)