30P10A MOSFET Datasheet: P-Ch, 100V, 30A. Full specification with pinout and replacement list

30P10A Specs and Replacement

Type Designator: 30P10A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO220 TO251 TO252

30P10A substitution

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30P10A datasheet

..1. Size:1592K goford
30p10a to252 to251.pdf pdf_icon

GOFORD 30P10A Description The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ) -4.5V -100V 39 m 33 m -30 A Super high dense cell design Advanced trench process technology Re... See More ⇒

..2. Size:1558K goford
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0.1. Size:1340K cn agmsemi
agm30p10a.pdf pdf_icon

AGM30P10A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.... See More ⇒

0.2. Size:1845K cn agmsemi
agm30p10ap.pdf pdf_icon

AGM30P10AP P- Channel Typical Characteristics -3V TC=25 impulse=250uS -3.5V -4.5V 25 -6V -10V -2.5V Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS= 0V Note TJ=25 VGS=-4.5V 25 VGS=-10V -V F ,Forward Voltage [V] -I D - Drain Current (A) Figure 4. Body Diode Forward Voltage F... See More ⇒