30P10A - Даташиты. Аналоги. Основные параметры

GOFORD 30P10ADescription The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagramVDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ)-4.5V -100V 39 m 33 m -30A Super high dense cell design Advanced trench process technology Re

GOFORD 30P10ADescription The 30P10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-10V (Typ)-4.5V -100V39 m 33 m -30A Super high dense cell design Advanced trench process technology Re

AGM30P10AFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P10APP- Channel Typical Characteristics-3VTC=25impulse=250uS-3.5V -4.5V 25-6V-10V-2.5VVds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsVGS= 0VNoteTJ=25VGS=-4.5V25VGS=-10V-V F ,Forward Voltage [V]-I D - Drain Current (A)Figure 4. Body Diode Forward Voltage F

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)