3205PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3205PL Datasheet (PDF)

..1. Size:1198K goford
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GOFORD3205PLDESCRIPTIONThe OGFD 3205PL is produced using advancedBVDSS RDS(ON) IDplanar stripe DMOS technology. The advanced55V 0.008 110Atechnology has been especially tailored to minimizeon-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devicesare well suited for high efficiency swit

9.1. Size:277K international rectifier
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PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

9.2. Size:215K international rectifier
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PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

9.3. Size:505K infineon
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IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

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