3205PL - аналоги, параметры транзистора - Справочник транзисторов

3205PL даташит

..1. Size:1198K goford
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GOFORD 3205PL DESCRIPTION The OGFD 3205PL is produced using advanced BVDSS RDS(ON) ID planar stripe DMOS technology. The advanced 55V 0.008 110A technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency swit

9.1. Size:277K international rectifier
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PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

9.2. Size:215K international rectifier
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PD-94791B IRF3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

9.3. Size:505K infineon
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IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

Другие MOSFET... 2301L , 25P06 , 25P10 , 25P10G , 28N10 , 28P55 , 30P10A , 30P55 , AO3400A , 3205TR , 3400L , 3401A , 3401L , 40N10K , 40P04 , 45P40 , 50N03 .