3205PL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 3205PL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 110 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 800 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO220
3205PL Datasheet (PDF)
3205pl.pdf
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GOFORD3205PLDESCRIPTIONThe OGFD 3205PL is produced using advancedBVDSS RDS(ON) IDplanar stripe DMOS technology. The advanced55V 0.008 110Atechnology has been especially tailored to minimizeon-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devicesare well suited for high efficiency swit
irfi3205pbf.pdf
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PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni
irf3205pbf.pdf
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PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee
irfi3205pbf.pdf
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IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn
irf3205pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee
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