All MOSFET. 3205PL Datasheet


3205PL MOSFET. Datasheet pdf. Equivalent

Type Designator: 3205PL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220

3205PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search


3205PL Datasheet (PDF)

0.1. 3205pl.pdf Size:1198K _goford


GOFORD3205PLDESCRIPTIONThe OGFD 3205PL is produced using advancedBVDSS RDS(ON) IDplanar stripe DMOS technology. The advanced55V 0.008 110Atechnology has been especially tailored to minimizeon-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devicesare well suited for high efficiency swit

9.1. irf3205pbf.pdf Size:215K _international_rectifier


PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

9.2. irfi3205pbf.pdf Size:277K _international_rectifier


PD - 95040AIRFI3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.008Gl Fully Avalanche Ratedl Lead-FreeID = 64ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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