3205PL Datasheet. Specs and Replacement

Type Designator: 3205PL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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3205PL datasheet

 ..1. Size:1198K  goford
 3205pl.pdf pdf_icon

3205PL

GOFORD 3205PL DESCRIPTION The OGFD 3205PL is produced using advanced BVDSS RDS(ON) ID planar stripe DMOS technology. The advanced 55V 0.008 110A technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency swit... See More ⇒

 9.1. Size:277K  international rectifier
 irfi3205pbf.pdf pdf_icon

3205PL

PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 9.2. Size:215K  international rectifier
 irf3205pbf.pdf pdf_icon

3205PL

PD-94791B IRF3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e... See More ⇒

 9.3. Size:505K  infineon
 irfi3205pbf.pdf pdf_icon

3205PL

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn... See More ⇒

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Detailed specifications: 2301L, 25P06, 25P10, 25P10G, 28N10, 28P55, 30P10A, 30P55, 60N06, 3205TR, 3400L, 3401A, 3401L, 40N10K, 40P04, 45P40, 50N03

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