5P40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 5P40
   Código: 5P40
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT23-3L

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5P40 Datasheet (PDF)

..1. Size:1087K goford
5p40.pdf

GOFORD5P40DDescription The 5P40 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-10V (Typ) @-4.5V -40V98m 73m -5.3 A 5P40 High power and current handing capability Marking and pin

0.1. Size:790K kec
kmd7d5p40qa.pdf

SEMICONDUCTOR KMD7D5P40QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as low on resistance, lowgate charge and excellent avalanche characteristiscs. It is mainly suitable forHbattery protection circuit.TD P GLUFEATURES AVDSS=-40V, ID=-7.5A.DIM MILLIMETERSDrain-Source ON Resistance._+A 4.85 0.2_

0.2. Size:1495K goford
45p40.pdf

GOFORD45P04Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -50A-40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c

0.3. Size:639K ncepower
nce035p40gu.pdf

http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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