5P40 PDF and Equivalents Search

 

5P40 Specs and Replacement

Type Designator: 5P40

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23-3L

5P40 substitution

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5P40 datasheet

 ..1. Size:1087K  goford
5p40.pdf pdf_icon

5P40

GOFORD 5P40 D Description The 5P40 uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-10V (Typ) @-4.5V -40V 98m 73m -5.3 A 5P40 High power and current handing capability Marking and pin ... See More ⇒

 0.1. Size:790K  kec
kmd7d5p40qa.pdf pdf_icon

5P40

SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit. T D P G L U FEATURES A VDSS=-40V, ID=-7.5A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A 4.85 0.2 _ ... See More ⇒

 0.2. Size:1495K  goford
45p40.pdf pdf_icon

5P40

GOFORD 45P04 Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -50A -40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c... See More ⇒

 0.3. Size:639K  ncepower
nce035p40gu.pdf pdf_icon

5P40

http //www.ncepower.com NCE035P40GU NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE035P40GU uses advanced trench technology and V =-40V,I =-130A DS D design to provide excellent R with low gate charge. It R ... See More ⇒

Detailed specifications: 3205TR, 3400L, 3401A, 3401L, 40N10K, 40P04, 45P40, 50N03, IRF9640, 60N04, 6706A, 68P40, 80N03, 80N04, 80N08TR, 8205A, 8205B

Keywords - 5P40 MOSFET specs

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