5P40
MOSFET. Datasheet pdf. Equivalent
Type Designator: 5P40
Marking Code: 5P40
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
SOT23-3L
5P40
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5P40
Datasheet (PDF)
..1. Size:1087K goford
5p40.pdf
GOFORD5P40DDescription The 5P40 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-10V (Typ) @-4.5V -40V98m 73m -5.3 A 5P40 High power and current handing capability Marking and pin
0.1. Size:790K kec
kmd7d5p40qa.pdf
SEMICONDUCTOR KMD7D5P40QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as low on resistance, lowgate charge and excellent avalanche characteristiscs. It is mainly suitable forHbattery protection circuit.TD P GLUFEATURES AVDSS=-40V, ID=-7.5A.DIM MILLIMETERSDrain-Source ON Resistance._+A 4.85 0.2_
0.2. Size:1495K goford
45p40.pdf
GOFORD45P04Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -50A-40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c
0.3. Size:639K ncepower
nce035p40gu.pdf
http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R
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