5P40 - описание и поиск аналогов

GOFORD 5P40 D Description The 5P40 uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-10V (Typ) @-4.5V -40V 98m 73m -5.3 A 5P40 High power and current handing capability Marking and pin

SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit. T D P G L U FEATURES A VDSS=-40V, ID=-7.5A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A 4.85 0.2 _

GOFORD 45P04 Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -50A -40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c

http //www.ncepower.com NCE035P40GU NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE035P40GU uses advanced trench technology and V =-40V,I =-130A DS D design to provide excellent R with low gate charge. It R