80N08TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 80N08TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 125 nC
   trⓘ - Tiempo de subida: 29.3 nS
   Cossⓘ - Capacitancia de salida: 415 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET 80N08TR

80N08TR Datasheet (PDF)

..1. Size:841K goford
80n08tr.pdf

GOFORD80N08TRN-Channel MOSFETSDESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe OGFD 80N08TR is the N-ChannellogicenhancementmodePowerfieldeffect transistors are producedusing high cell density. Dmostrench technology. This highdensity process is especiallytailored to minimize on-stateresistance.These devices are particularlysuitedforlowvoltageapplicationsuchascel

8.1. Size:579K way-on
wmm80n08ts.pdf

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR

8.2. Size:614K way-on
wmk80n08ts.pdf

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 80A DS DR

8.3. Size:501K way-on
wmo80n08ts.pdf

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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