80N08TR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 80N08TR 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29.3 nS
Cossⓘ - Capacitancia de salida: 415 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Encapsulados: TO220
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80N08TR datasheet
80n08tr.pdf
GOFORD 80N08TR N-Channel MOSFETS DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The OGFD 80N08TR is the N-Channel logicenhancementmodePowerfield effect transistors are produced using high cell density. Dmos trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitedforlowvoltageapplication suchascel
wmm80n08ts.pdf
WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. G S Features TO-263 V = 80V, I = 80A DS D R
wmk80n08ts.pdf
WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 80V, I = 80A DS D R
wmo80n08ts.pdf
WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 80V, I = 80A DS D R
Otros transistores... 45P40, 50N03, 5P40, 60N04, 6706A, 68P40, 80N03, 80N04, IRFB3206, 8205A, 8205B, G3205, G1010, G3710, 5N20A, 630A, 640
Parámetros del MOSFET. Cómo se afectan entre sí.
History: 2SJ381 | DHS020N88E | NTP22N06 | 3N80G-TMS4-R | NTP5411NG | HFS8N70U | IRF840ALPBF
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