80N08TR Datasheet and Replacement
Type Designator: 80N08TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 29.3 nS
Cossⓘ - Output Capacitance: 415 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO220
80N08TR substitution
80N08TR Datasheet (PDF)
80n08tr.pdf

GOFORD80N08TRN-Channel MOSFETSDESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe OGFD 80N08TR is the N-ChannellogicenhancementmodePowerfieldeffect transistors are producedusing high cell density. Dmostrench technology. This highdensity process is especiallytailored to minimize on-stateresistance.These devices are particularlysuitedforlowvoltageapplicationsuchascel
wmm80n08ts.pdf

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR
wmk80n08ts.pdf

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 80A DS DR
wmo80n08ts.pdf

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR
Datasheet: 45P40 , 50N03 , 5P40 , 60N04 , 6706A , 68P40 , 80N03 , 80N04 , STP65NF06 , 8205A , 8205B , G3205 , G1010 , G3710 , 5N20A , 630A , 640 .
History: FQD6N40TF
Keywords - 80N08TR MOSFET datasheet
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History: FQD6N40TF



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