80N08TR MOSFET. Datasheet pdf. Equivalent

80N08TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

80N08TR Datasheet (PDF)

1.1. 80n08tr.pdf Size:841K _goford

GOFORD 80N08TR N-Channel MOSFETS DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The OGFD 80N08TR is the N-Channel logicenhancementmodePowerfield effect transistors are produced using high cell density. Dmos trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitedforlowvoltageapplication suchascel

5.1. spp80n08s2l spb80n08s2l.pdf Size:314K _update

SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V • N-Channel RDS(on) max. SMD version 6.8 mΩ • Enhancement mode ID 80 A • Logic Level P- TO263 -3-2 P- TO220 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SPP80N08S2L-07 P- TO220 -3-1 Q67060-S6015 2N08L07 SPB80N08S2L-

5.2. tsm80n08cz.pdf Size:62K _update_mosfet

 TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Drain 3. Source 75 8 @ VGS =10V 80 Features Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.) ● Low Crss typical @ 203pF (Typ.) Ordering Information Part No. Package Packing

 5.3. ixth180n085t ixtq180n085t.pdf Size:203K _ixys

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25� C to 175� C85 V VDGR TJ = 25� C to 175� C; RGS = 1 M? 85 V VGSM Transient � 20 V TO-3P (IXTQ) ID25 TC = 25� C 180

5.4. ixta180n085t ixtp180n085t.pdf Size:214K _ixys

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25� C to 175� C85 V VDGR TJ = 25� C to 175� C; RGS = 1 M? 85 V G VGSM Transient � 20 V S (TAB) ID25 TC = 25� C 180 A ILRMS Lead Cu

 5.5. ixfr180n085.pdf Size:57K _ixys

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25°C

5.6. ixfc80n08.pdf Size:525K _ixys

ADVANCE TECHNICAL INFORMATION VDSS ID25 RDS(on) HiPerFETTM MOSFET IXFC 80N08 80 V 80 A 11 mΩ Ω Ω Ω Ω ISOPLUS220TM Ω 85 V 80 A 11 mΩ Ω Ω Ω IXFC 80N085 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings ISOPLUS220TM VDSS TJ = 25°C to 150°C 80N08 80 V VDGR TJ = 25°C to

5.7. ixfk180n085 ixfx180n085.pdf Size:46K _ixys

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V D (TAB) G VGS Continuous ±20 V D VGSM Transient ±30 V ID25 TC = 25°C (MOSFET chip capability) 1

5.8. ixfh80n085 ixft80n085.pdf Size:54K _ixys

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr ? 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25�C to 150�C85 V VDGR TJ = 25�C to 150�C; RGS = 1 MW 85 V VGS Continuous �20 V VGSM Transient �30 V (TAB) ID25 TC = 25�C80 A IL(RMS) Lead

5.9. ixta180n085t7.pdf Size:197K _ixys

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25� C to 175� C85 V VDGR TJ = 25� C to 175� C; RGS = 1 M? 85 V VGSM Transient � 20 V 1 ID25 TC = 25� C 180 A 7 ILRMS Package Curre

5.10. 80n08.pdf Size:199K _utc

UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. ? FEATURES * Trench FET Power MOSFETS Technology ? SYMBOL ? ORDERING INFORMATION

5.11. utt80n08.pdf Size:127K _utc

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drain

5.12. kf80n08p f.pdf Size:431K _kec

KF80N08P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ FEATURES I + D 0.8 0.1 _ E 3.6 + 0.2 VDSS= 75V, I

5.13. mtb80n08j3.pdf Size:310K _cystek

Spec. No. : C909J3 Issued Date : 2013.04.01 CYStech Electronics Corp. Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 80V MTB80N08J3 ID 15A RDS(ON)@VGS=10V, ID=15A 59.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 60.5 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic

5.14. brb80n08.pdf Size:751K _blue-rocket-elect

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

5.15. br80n08.pdf Size:859K _blue-rocket-elect

BR80N08(BRCS80N08R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hig

5.16. ftk80n08.pdf Size:561K _first_silicon

SEMICONDUCTOR FTK80N08 TECHNICAL DATA N-CHANNEL MOSFET (75V/80A, Rds=10mΩ) Feathers: TO-220 Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 Avalanche Energy 100% test 2 3 Description: The FTK80N08 is a new generation of middle voltag

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