Справочник MOSFET. 80N08TR

 

80N08TR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 80N08TR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 29.3 ns
   Cossⓘ - Выходная емкость: 415 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для 80N08TR

   - подбор ⓘ MOSFET транзистора по параметрам

 

80N08TR Datasheet (PDF)

 ..1. Size:841K  goford
 80n08tr.pdf pdf_icon

80N08TR

GOFORD80N08TRN-Channel MOSFETSDESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe OGFD 80N08TR is the N-ChannellogicenhancementmodePowerfieldeffect transistors are producedusing high cell density. Dmostrench technology. This highdensity process is especiallytailored to minimize on-stateresistance.These devices are particularlysuitedforlowvoltageapplicationsuchascel

 8.1. Size:579K  way-on
 wmm80n08ts.pdf pdf_icon

80N08TR

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR

 8.2. Size:614K  way-on
 wmk80n08ts.pdf pdf_icon

80N08TR

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 80A DS DR

 8.3. Size:501K  way-on
 wmo80n08ts.pdf pdf_icon

80N08TR

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 45P40 , 50N03 , 5P40 , 60N04 , 6706A , 68P40 , 80N03 , 80N04 , 2N7002 , 8205A , 8205B , G3205 , G1010 , G3710 , 5N20A , 630A , 640 .

History: SSM6J402TU | RHU003N03FRA | IXTT30N50P | STF26NM60N | BRCS250N03DSC | OSG70R1KFF | VS4604AP

 

 
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