Справочник MOSFET. 80N08TR

 

80N08TR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 80N08TR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 29.3 ns
   Cossⓘ - Выходная емкость: 415 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

80N08TR Datasheet (PDF)

 ..1. Size:841K  goford
 80n08tr.pdf pdf_icon

80N08TR

GOFORD80N08TRN-Channel MOSFETSDESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe OGFD 80N08TR is the N-ChannellogicenhancementmodePowerfieldeffect transistors are producedusing high cell density. Dmostrench technology. This highdensity process is especiallytailored to minimize on-stateresistance.These devices are particularlysuitedforlowvoltageapplicationsuchascel

 8.1. Size:579K  way-on
 wmm80n08ts.pdf pdf_icon

80N08TR

WMM80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = 80V, I = 80A DS DR

 8.2. Size:614K  way-on
 wmk80n08ts.pdf pdf_icon

80N08TR

WMK80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 80V, I = 80A DS DR

 8.3. Size:501K  way-on
 wmo80n08ts.pdf pdf_icon

80N08TR

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFS9133 | SFP055N90C3 | IPI600N25N3G | DH105N07D | AM40N20-180P | WMLL065N15HG2 | STF26NM60N

 

 
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