G1010 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G1010 datasheet

..1. Size:2584K goford
g1010.pdf pdf_icon

GOFORD G1010 Features VDSS RDS(ON) ID @ 10V (typ) 8.5m 100A 60V Fast switching 100% avalanche tested Improved dv/dt capability Application UPS High efficiency switch mode power supplies Description Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 V Drain-Source Voltage 60 V DSS V Gate

0.1. Size:113K renesas
rej03g1010 2sk2393ds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. Size:299K niko-sem
pg1010bk.pdf pdf_icon

N-Channel Enhancement Mode PG1010BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 10m 58A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vol

0.3. Size:238K niko-sem
pg1010bd.pdf pdf_icon

N-Channel Enhancement Mode PG1010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 10.5m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =