G1010 PDF and Equivalents Search

 ..1. Size:2584K  goford
 g1010.pdf

GOFORD G1010 Features VDSS RDS(ON) ID @ 10V (typ) 8.5m 100A 60V Fast switching 100% avalanche tested Improved dv/dt capability Application UPS High efficiency switch mode power supplies Description Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO-220 V Drain-Source Voltage 60 V DSS V Gate... See More ⇒

 0.1. Size:113K  renesas
 rej03g1010 2sk2393ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:299K  niko-sem
 pg1010bk.pdf

N-Channel Enhancement Mode PG1010BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 10m 58A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vol... See More ⇒

 0.3. Size:238K  niko-sem
 pg1010bd.pdf

N-Channel Enhancement Mode PG1010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 10.5m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =... See More ⇒

 0.4. Size:51K  sensitron
 shsmg1010.pdf

SENSITRON SHD739601 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2049, REV. - Formerly part number SHSMG1010 1000 VOLT, 50 AMP IGBT DEVICE HIGH SPEED, LOW VCE IGBT ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 1000 - - V IC = 3 mA, VG... See More ⇒