7N80F Todos los transistores

 ..1. Size:1859K  goford
 7n80f.pdf

GOFORD 7N80 800V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 800V 2 7A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui

 0.1. Size:1165K  jilin sino
 jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf

N R N-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

 0.2. Size:667K  jilin sino
 jcs7n80fc.pdf

 0.3. Size:303K  crhj
 cs7n80f a9.pdf

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.4. Size:392K  silan
 svf7n80t svf7n80f svf7n80kl svf7n80k svf7n80fd.pdf

 0.5. Size:520K  silan
 svf7n80t svf7n80f.pdf

SVF7N80T/F 7A 800V N 2 SVF7N80T/F N MOS F-CellTM VDMOS 1 3 AC-DC

 0.6. Size:265K  foshan
 cs7n80f.pdf

BRF7N80(CS7N80F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switch mode power supplies. Features Low gate charge Low Crss Fast switching. /Absolute maximum ratings(Ta=25 )

 0.7. Size:620K  taitron
 msk7n80f msk7n80t.pdf

800V/7A N-Channel MOSFET MSK7N80T/F 800V/7A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=7A; Low Drain-Source ON Resistance RDS(ON) =1.55 @ VGS=10V

 0.8. Size:303K  wuxi china
 cs7n80fa9.pdf

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.9. Size:651K  convert
 cs7n80f cs7n80p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS7N80F, CS7N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N80F TO-220F CS7N80F CS7N8

 0.10. Size:328K  cn hmsemi
 hm7n80 hm7n80f.pdf

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 27nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin