7N80F - Даташиты. Аналоги. Основные параметры

GOFORD 7N80 800V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.800V 2 7AThis advanced technology has beenespecially tailored to minimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well sui

N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

SVF7N80T/F/KL/K/FD 7A800V N 2SVF7N80T/F/KL/K/FD N MOS F-CellTM VDMOS 11 233TO-220F-3L

SVF7N80T/F 7A800V N 2SVF7N80T/F NMOSF-CellTMVDMOS 1 3 AC-DC

BRF7N80(CS7N80F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switch mode power supplies. : Features: Low gate chargeLow Crss Fast switching. /Absolute maximum ratings(Ta=25)

800V/7A N-Channel MOSFET MSK7N80T/F800V/7A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220Features VDSS=800V, ID=7A; Low Drain-Source ON Resistance: RDS(ON) =1.55 @ VGS=10V

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N80F, CS7N80P800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N80F TO-220F CS7N80FCS7N8

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 27nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin