7N80F - описание и поиск аналогов

GOFORD 7N80 800V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 800V 2 7A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui

N R N-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

SVF7N80T/F 7A 800V N 2 SVF7N80T/F N MOS F-CellTM VDMOS 1 3 AC-DC

BRF7N80(CS7N80F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switch mode power supplies. Features Low gate charge Low Crss Fast switching. /Absolute maximum ratings(Ta=25 )

800V/7A N-Channel MOSFET MSK7N80T/F 800V/7A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=7A; Low Drain-Source ON Resistance RDS(ON) =1.55 @ VGS=10V

Silicon N-Channel Power MOSFET R CS7N80F A9 General Description VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

nvert Suzhou Convert Semiconductor Co ., Ltd. CS7N80F, CS7N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N80F TO-220F CS7N80F CS7N8

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 27nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin