All MOSFET. 7N80F Datasheet

 

7N80F MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N80F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO220F

7N80F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N80F Datasheet (PDF)

1.1. msk7n80f msk7n80t.pdf Size:620K _upd-mosfet

7N80F
7N80F

800V/7A N-Channel MOSFET MSK7N80T/F 800V/7A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for electronic ballast • Suitable for switching mode power supplies TO-220 Features • VDSS=800V, ID=7A; • Low Drain-Source ON Resistance: RDS(ON) =1.55 Ω @ VGS=10V

1.2. cs7n80f.pdf Size:265K _update_mosfet

7N80F
7N80F

BRF7N80(CS7N80F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switch mode power supplies. 特点:低的门槛电压、反向传输电容小、开关速度快。 Features: Low gate charge、Low Crss 、Fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

 1.3. 7n80f.pdf Size:1859K _goford

7N80F
7N80F

GOFORD 7N80 800V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 800V 2Ω 7A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui

1.4. cs7n80f a9.pdf Size:303K _crhj

7N80F
7N80F

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description: VDSS 800 V CS7N80F A9, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: 8N60A , 8N60AF , 10N60F , 12N60F , 7N65AF , 10N65A , 10N65AF , 6N70F , IRFP450 , 18N50A , G4N65 , G7N65 , G8N80BF , G10N80BF , 12N65A , 12N65AF , SVD4N65T .

 
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