G4N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: G4N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15.33 nS
   Cossⓘ - Capacitancia de salida: 65.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO251 TO252

Búsqueda de reemplazo de MOSFET G4N65

G4N65 Datasheet (PDF)

..1. Size:1436K goford
g4n65.pdf

GOFORDG4N65Description Features VDSS RDS(ON) ID @10V (typ) 4.5 A650V 1.95 Fast switching 100% avalanche tested To-251 To-252 Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Paramet

0.1. Size:1254K 1
dg4n65.pdf

DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N

0.2. Size:273K diodes
dmg4n65ct.pdf

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage 650V 3.0@VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q

0.3. Size:321K diodes
dmg4n65cti.pdf

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0@VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC

0.4. Size:2041K anbon
au4n65s ad4n65s at4n65s af4n65s ak4n65s ag4n65s.pdf

0.5. Size:1098K lonten
lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

0.6. Size:261K inchange semiconductor
dmg4n65ct.pdf

isc N-Channel MOSFET Transistor DMG4N65CTFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.7. Size:252K inchange semiconductor
dmg4n65cti.pdf

isc N-Channel MOSFET Transistor DMG4N65CTIFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

0.8. Size:4470K dyelec
dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf