G4N65 PDF and Equivalents Search

 ..1. Size:1436K  goford
 g4n65.pdf

GOFORD G4N65 Description Features VDSS RDS(ON) ID @ 10V (typ) 4.5 A 650V 1.95 Fast switching 100% avalanche tested To-251 To-252 Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Paramet... See More ⇒

 0.1. Size:1254K  1
 dg4n65.pdf

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 0.2. Size:273K  diodes
 dmg4n65ct.pdf

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage 650V 3.0 @VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q... See More ⇒

 0.3. Size:321K  diodes
 dmg4n65cti.pdf

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0 @VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC... See More ⇒

 0.4. Size:2041K  anbon
 au4n65s ad4n65s at4n65s af4n65s ak4n65s ag4n65s.pdf

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 0.5. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf

LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate... See More ⇒

 0.6. Size:261K  inchange semiconductor
 dmg4n65ct.pdf

isc N-Channel MOSFET Transistor DMG4N65CT FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 0.7. Size:252K  inchange semiconductor
 dmg4n65cti.pdf

isc N-Channel MOSFET Transistor DMG4N65CTI FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 0.8. Size:4470K  dyelec
 dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf

4N65 650V N-Channel Power MOSFET RDS(ON)... See More ⇒