Справочник MOSFET. G4N65

 

G4N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: G4N65
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15.33 ns
   Cossⓘ - Выходная емкость: 65.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
   Тип корпуса: TO251 TO252

 Аналог (замена) для G4N65

 

 

G4N65 Datasheet (PDF)

 ..1. Size:1436K  goford
 g4n65.pdf

G4N65 G4N65

GOFORDG4N65Description Features VDSS RDS(ON) ID @10V (typ) 4.5 A650V 1.95 Fast switching 100% avalanche tested To-251 To-252 Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Paramet

 0.1. Size:1254K  1
 dg4n65.pdf

G4N65 G4N65

DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N

 0.2. Size:273K  diodes
 dmg4n65ct.pdf

G4N65 G4N65

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage 650V 3.0@VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q

 0.3. Size:321K  diodes
 dmg4n65cti.pdf

G4N65 G4N65

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0@VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC

 0.4. Size:2041K  anbon
 au4n65s ad4n65s at4n65s af4n65s ak4n65s ag4n65s.pdf

G4N65 G4N65

 0.5. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf

G4N65 G4N65

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

 0.6. Size:261K  inchange semiconductor
 dmg4n65ct.pdf

G4N65 G4N65

isc N-Channel MOSFET Transistor DMG4N65CTFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.7. Size:252K  inchange semiconductor
 dmg4n65cti.pdf

G4N65 G4N65

isc N-Channel MOSFET Transistor DMG4N65CTIFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.8. Size:4470K  dyelec
 dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf

G4N65 G4N65

4N65650V N-Channel Power MOSFET RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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