FTK75N75 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK75N75
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 220 nS
Cossⓘ - Capacitancia de salida: 900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de FTK75N75 MOSFET
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FTK75N75 datasheet
ftk75n75.pdf
SEMICONDUCTOR FTK75N75 TECHNICAL DATA ID=75A Feathers BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK75N75 is a new generation of middle voltage and 1 2 3
ftk7510 1.pdf
SEMICONDUCTOR FTK7510F/P TECHNICAL DATA ID=75A Feathers BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 2 Avalanche Energy 100% test 3 TO-220 Description The FTK7510 is a new generation of middle voltag
ftk7509.pdf
SEMICONDUCTOR FTK7509 TECHNICAL DATA Feathers ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK7509 is a new generation of middle voltage and hig
Otros transistores... FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , EMB04N03H , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 , FTK7002 .
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