Справочник MOSFET. FTK75N75

 

FTK75N75 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FTK75N75
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 220 ns
   Cossⓘ - Выходная емкость: 900 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FTK75N75

   - подбор ⓘ MOSFET транзистора по параметрам

 

FTK75N75 Datasheet (PDF)

 ..1. Size:366K  first silicon
ftk75n75.pdfpdf_icon

FTK75N75

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

 9.1. Size:388K  first silicon
ftk7510 1.pdfpdf_icon

FTK75N75

SEMICONDUCTOR FTK7510F/PTECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P : High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 12 Avalanche Energy 100% test 3TO-220Description: The FTK7510 is a new generation of middle voltag

 9.2. Size:327K  first silicon
ftk7510.pdfpdf_icon

FTK75N75

SEMICONDUCTOR FTK7510 TECHNICAL DATAFeathers: ID=75A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=10mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK7510 is a new generation of middle voltage and high current N

 9.3. Size:566K  first silicon
ftk7509.pdfpdf_icon

FTK75N75

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

Другие MOSFET... FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , 2SK3918 , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 , FTK7002 .

History: CHM634PAGP | ZXMN6A07F | NVMFS5A140PLZ

 

 
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