All MOSFET. FTK75N75 Datasheet

 

FTK75N75 Datasheet and Replacement


   Type Designator: FTK75N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

 FTK75N75 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FTK75N75 Datasheet (PDF)

 ..1. Size:366K  first silicon
 ftk75n75.pdf pdf_icon

FTK75N75

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

 9.1. Size:388K  first silicon
 ftk7510 1.pdf pdf_icon

FTK75N75

SEMICONDUCTOR FTK7510F/PTECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P : High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 12 Avalanche Energy 100% test 3TO-220Description: The FTK7510 is a new generation of middle voltag

 9.2. Size:327K  first silicon
 ftk7510.pdf pdf_icon

FTK75N75

SEMICONDUCTOR FTK7510 TECHNICAL DATAFeathers: ID=75A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=10mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK7510 is a new generation of middle voltage and high current N

 9.3. Size:566K  first silicon
 ftk7509.pdf pdf_icon

FTK75N75

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

SHOW MORE

Datasheet: FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FTK7N65DD , EMB04N03H , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 , FTK7002 .

History: SI1958DH | 2SJ126

Keywords - FTK75N75 MOSFET datasheet

 FTK75N75 cross reference
 FTK75N75 equivalent finder
 FTK75N75 lookup
 FTK75N75 substitution
 FTK75N75 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.