FTK1N60P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK1N60P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm

Encapsulados: TO220

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FTK1N60P datasheet

 ..1. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60P

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

 7.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60P

SEMICONDUCTOR FTK1N60T/L TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60T/L is a high voltage MOSFET and is designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche T TO-92 characteristics. This power MOSFET is usually used at high speed switching app

Otros transistores... FTK12N10S, FTK12N65DD, FTK12N65F, FTK12N65P, FTK138, FTK138D, FTK138U, FTK15N10D, CS150N03A8, FTK1N60F, FTK1N60D, FTK1N60I, FTK1N60T, FTK1N60L, FTK2N60D, FTK2N60F, FTK2N60I