All MOSFET. FTK1N60P Datasheet

 

FTK1N60P Datasheet and Replacement


   Type Designator: FTK1N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO220
 

 FTK1N60P substitution

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FTK1N60P Datasheet (PDF)

 ..1. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60P

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

 7.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60P

SEMICONDUCTORFTK1N60T/LTECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsN-CHANNEL MOSFETDESCRIPTIONThe FTK 1N60T/L is a high voltage MOSFET and is designed to1have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheT : TO-92characteristics. This power MOSFET is usually used at high speedswitching app

Datasheet: FTK12N10S , FTK12N65DD , FTK12N65F , FTK12N65P , FTK138 , FTK138D , FTK138U , FTK15N10D , IRLB4132 , FTK1N60F , FTK1N60D , FTK1N60I , FTK1N60T , FTK1N60L , FTK2N60D , FTK2N60F , FTK2N60I .

History: 2SK807 | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - FTK1N60P MOSFET datasheet

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