FTK1N60T Todos los transistores

 

FTK1N60T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK1N60T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9.3 Ohm
   Paquete / Cubierta: TO92
 

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FTK1N60T Datasheet (PDF)

 0.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60T

SEMICONDUCTORFTK1N60T/LTECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsN-CHANNEL MOSFETDESCRIPTIONThe FTK 1N60T/L is a high voltage MOSFET and is designed to1have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheT : TO-92characteristics. This power MOSFET is usually used at high speedswitching app

 7.1. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60T

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Otros transistores... FTK138 , FTK138D , FTK138U , FTK15N10D , FTK1N60P , FTK1N60F , FTK1N60D , FTK1N60I , 20N50 , FTK1N60L , FTK2N60D , FTK2N60F , FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I .

History: SFS9620 | 2SK2939S | SI4403BDY | SSPS922NE | B640 | 2SK2186

 

 
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