FTK1N60T Spec and Replacement
Type Designator: FTK1N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
Package: TO92
FTK1N60T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK1N60T Specs
ftk1n60t-l.pdf
SEMICONDUCTOR FTK1N60T/L TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60T/L is a high voltage MOSFET and is designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche T TO-92 characteristics. This power MOSFET is usually used at high speed switching app... See More ⇒
ftk1n60p f d i.pdf
SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu... See More ⇒
Detailed specifications: FTK138 , FTK138D , FTK138U , FTK15N10D , FTK1N60P , FTK1N60F , FTK1N60D , FTK1N60I , IRFP450 , FTK1N60L , FTK2N60D , FTK2N60F , FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
