FTK3004D Todos los transistores

 

FTK3004D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK3004D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 55 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 450 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO252

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FTK3004D Datasheet (PDF)

 ..1. Size:250K  first silicon
ftk3004d.pdf

FTK3004D FTK3004D

SEMICONDUCTORFTK3004DTECHNICAL DATADESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is Dsuitable for use as a load switch or in PWM applications. GGENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

 9.1. Size:304K  first silicon
ftk3018.pdf

FTK3004D FTK3004D

SEMICONDUCTORFTK3018TECHNICAL DATASilicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 32) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.14) Easily designed drive circuits. 5) Easy to parallel. SOT323 ESD>500V We declare that the material of product compliance with RoHS requirements.N

 9.2. Size:421K  first silicon
ftk3051.pdf

FTK3004D FTK3004D

SEMICONDUCTORFTK3051TECHNICAL DATAMain Product Characteristics: D1 6D DVDSS -30V 25DDG RDS(on) 45mohm(typ.) 34G SSID -4A SOT23-6 Marking and pin Schematic diagramA ssignment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

 9.3. Size:315K  first silicon
ftk3022.pdf

FTK3004D FTK3004D

SEMICONDUCTOR FTK3022 TECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The FTK3022 is a new generation of middle voltage and high current NChannel enhancement mode trench power FTK3022 TOP View (TO

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