FTK3004D Datasheet and Replacement. Cross Reference Search

FTK3004D Datasheet (PDF)

..1. Size:250K first silicon
ftk3004d.pdf pdf_icon

SEMICONDUCTORFTK3004DTECHNICAL DATADESCRIPTION The FTK3004D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is Dsuitable for use as a load switch or in PWM applications. GGENERAL FEATURES S VDS = 30V,ID =55A Schematic diagram RDS(ON)

9.1. Size:304K first silicon
ftk3018.pdf pdf_icon

SEMICONDUCTORFTK3018TECHNICAL DATASilicon N-channel MOSFET 100mA, 30V Features 1) Low on-resistance. 32) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.14) Easily designed drive circuits. 5) Easy to parallel. SOT323 ESD>500V We declare that the material of product compliance with RoHS requirements.N

9.2. Size:421K first silicon
ftk3051.pdf pdf_icon

SEMICONDUCTORFTK3051TECHNICAL DATAMain Product Characteristics: D1 6D DVDSS -30V 25DDG RDS(on) 45mohm(typ.) 34G SSID -4A SOT23-6 Marking and pin Schematic diagramA ssignment Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resista

9.3. Size:315K first silicon
ftk3022.pdf pdf_icon

SEMICONDUCTOR FTK3022 TECHNICAL DATAFeathers: ID =60A Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=22mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The FTK3022 is a new generation of middle voltage and high current NChannel enhancement mode trench power FTK3022 TOP View (TO

Datasheet: FTK2310 , FTK2312 , FTK2324 , FTK2333 , FTK2341E , FTK25N03PDFN33 , FTK2627 , FTK2816E , AO3407 , FTK3018 , FTK3022 , FTK3051 , FTK3134K , FTK3134KD , FTK3139K , FTK3341 , FTK3400 .