FTK3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK3407
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET FTK3407

FTK3407 Datasheet (PDF)

..1. Size:229K first silicon
ftk3407.pdf

SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)

0.1. Size:380K first silicon
ftk3407l.pdf

SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit

8.1. Size:232K first silicon
ftk3400.pdf

SEMICONDUCTORFTK3400TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor DFEATURE GHigh dense cell design for extremely low R SDS(ON)Schematic diagram Exceptional on-resistance and maximum DC current capability D3R0G 1 2 SMarking and pin AssignmentSOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit

8.2. Size:305K first silicon
ftk3404.pdf

SEMICONDUCTORFTK3404TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m@ 10V30V5.8A 2142m@4.5V SOT231. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

8.3. Size:236K first silicon
ftk3401.pdf

SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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