Справочник MOSFET. FTK3407

 

FTK3407 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FTK3407
   Маркировка: 3407
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.4 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для FTK3407

 

 

FTK3407 Datasheet (PDF)

 ..1. Size:229K  first silicon
 ftk3407.pdf

FTK3407 FTK3407

SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)

 0.1. Size:380K  first silicon
 ftk3407l.pdf

FTK3407 FTK3407

SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 8.1. Size:232K  first silicon
 ftk3400.pdf

FTK3407 FTK3407

SEMICONDUCTORFTK3400TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor DFEATURE GHigh dense cell design for extremely low R SDS(ON)Schematic diagram Exceptional on-resistance and maximum DC current capability D3R0G 1 2 SMarking and pin AssignmentSOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 8.2. Size:305K  first silicon
 ftk3404.pdf

FTK3407 FTK3407

SEMICONDUCTORFTK3404TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m@ 10V30V5.8A 2142m@4.5V SOT231. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

 8.3. Size:236K  first silicon
 ftk3401.pdf

FTK3407 FTK3407

SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 

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