FTK3407 Specs and Replacement

Type Designator: FTK3407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

FTK3407 substitution

- MOSFET ⓘ Cross-Reference Search

 

FTK3407 datasheet

 ..1. Size:229K  first silicon
 ftk3407.pdf pdf_icon

FTK3407

SEMICONDUCTOR FTK3407 TECHNICAL DATA D DESCRIPTION The FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.1A 3 RDS(ON) ... See More ⇒

 0.1. Size:380K  first silicon
 ftk3407l.pdf pdf_icon

FTK3407

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

 8.1. Size:232K  first silicon
 ftk3400.pdf pdf_icon

FTK3407

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

 8.2. Size:305K  first silicon
 ftk3404.pdf pdf_icon

FTK3407

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m @ 10V 30V 5.8A 2 1 42m @4.5V SOT 23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s... See More ⇒

SHOW MORE

Detailed specifications: FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341, FTK3400, FTK3401, FTK3404, IRF540, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, FTK35N03PDFN56, FTK3610

Keywords - FTK3407 MOSFET specs

 FTK3407 cross reference

 FTK3407 equivalent finder

 FTK3407 pdf lookup

 FTK3407 substitution

 FTK3407 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility