FTK35N03PDFN56 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK35N03PDFN56

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: PDFN5X6

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FTK35N03PDFN56 datasheet

 2.1. Size:586K  first silicon
 ftk35n03pdfn33.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

 8.1. Size:668K  first silicon
 ftk35n33pdfn56.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

Otros transistores... FTK3404, FTK3407, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, IRFB4110, FTK3610, FTK3615, FTK3620, FTK3N80I, FTK3N80D, FTK3N80P, FTK3N80F, FTK4004