All MOSFET. FTK35N03PDFN56 Datasheet

 

FTK35N03PDFN56 Datasheet and Replacement


   Type Designator: FTK35N03PDFN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5X6
 

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FTK35N03PDFN56 Datasheet (PDF)

 2.1. Size:586K  first silicon
 ftk35n03pdfn33.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

 8.1. Size:668K  first silicon
 ftk35n33pdfn56.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

Datasheet: FTK3404 , FTK3407 , FTK3407L , FTK3415 , FTK3415L , FTK3439KD , FTK3443 , FTK35N03PDFN33 , IRF640N , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 .

History: NCE2007N

Keywords - FTK35N03PDFN56 MOSFET datasheet

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