FTK35N03PDFN56 Specs and Replacement

Type Designator: FTK35N03PDFN56

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: PDFN5X6

FTK35N03PDFN56 substitution

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FTK35N03PDFN56 datasheet

 2.1. Size:586K  first silicon
 ftk35n03pdfn33.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char... See More ⇒

 8.1. Size:668K  first silicon
 ftk35n33pdfn56.pdf pdf_icon

FTK35N03PDFN56

SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte... See More ⇒

Detailed specifications: FTK3404, FTK3407, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, IRFB4110, FTK3610, FTK3615, FTK3620, FTK3N80I, FTK3N80D, FTK3N80P, FTK3N80F, FTK4004

Keywords - FTK35N03PDFN56 MOSFET specs

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