FTK3610 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK3610

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SOP8

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FTK3610 datasheet

 ..1. Size:345K  first silicon
 ftk3610.pdf pdf_icon

FTK3610

SEMICONDUCTOR FTK3610 TECHNICAL DATA D DESCRIPTION The FTF3610 uses advanced trench G technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in S PWM applications. Schematic diagram D D D D 6 5 GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610 RDS(ON)

 8.1. Size:211K  first silicon
 ftk3615.pdf pdf_icon

FTK3610

SEMICONDUCTOR FTK3615 TECHNICAL DATA D DESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D D GENERAL FEATURES 5 8 6 7 VDS = - 30V,ID = -10A 3615 RDS(ON)

 9.1. Size:425K  first silicon
 ftk3620.pdf pdf_icon

FTK3610

SEMICONDUCTOR FTK3620 TECHNICAL DATA DESCRIPTION D 1 D 2 The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2 suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 5 8 7 RDS(ON)

Otros transistores... FTK3407, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, FTK35N03PDFN56, IRF640N, FTK3615, FTK3620, FTK3N80I, FTK3N80D, FTK3N80P, FTK3N80F, FTK4004, FTK4015D