FTK3610 Datasheet and Replacement
Type Designator: FTK3610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
FTK3610 substitution
FTK3610 Datasheet (PDF)
ftk3610.pdf

SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)
ftk3615.pdf

SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)
ftk3620.pdf

SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)
Datasheet: FTK3407 , FTK3407L , FTK3415 , FTK3415L , FTK3439KD , FTK3443 , FTK35N03PDFN33 , FTK35N03PDFN56 , IRF630 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 , FTK4015D .
History: SI2309 | HM60N06K | NTLJD3182FZTBG | 2SK1476 | HM25N03Q | IPT019N08N5 | NCE65N460I
Keywords - FTK3610 MOSFET datasheet
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History: SI2309 | HM60N06K | NTLJD3182FZTBG | 2SK1476 | HM25N03Q | IPT019N08N5 | NCE65N460I



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