FTK3N80I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK3N80I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO251

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FTK3N80I datasheet

 7.1. Size:218K  first silicon
 ftk3n80p f d i.pdf pdf_icon

FTK3N80I

SEMICONDUCTOR FTK3N80P/F/D/I TECHNICAL DATA 3 Amps, 800 Volts Power MOSFET N-CHANNEL MOSFET I 1 TO - 251 DESCRIPTION The FTK 3N80 is a high voltage MOSFET and is designed to D 1 have better characteristics, such as fast switching time, low gate TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at hig

 7.2. Size:341K  first silicon
 ftk3n80p f.pdf pdf_icon

FTK3N80I

SEMICONDUCTOR FTK3N80P / F TECHNICAL DATA Power MOSFET 3 Amps, 800 Volts N-CHANNEL MOSFET P 1 DESCRIPTION TO-220 The FTK 3N80 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F switchin

Otros transistores... FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, FTK35N03PDFN56, FTK3610, FTK3615, FTK3620, IRFB4227, FTK3N80D, FTK3N80P, FTK3N80F, FTK4004, FTK4015D, FTK40N10D, FTK40P04D, FTK4406