FTK3N80I Specs and Replacement

Type Designator: FTK3N80I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO251

FTK3N80I substitution

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FTK3N80I datasheet

 7.1. Size:218K  first silicon
 ftk3n80p f d i.pdf pdf_icon

FTK3N80I

SEMICONDUCTOR FTK3N80P/F/D/I TECHNICAL DATA 3 Amps, 800 Volts Power MOSFET N-CHANNEL MOSFET I 1 TO - 251 DESCRIPTION The FTK 3N80 is a high voltage MOSFET and is designed to D 1 have better characteristics, such as fast switching time, low gate TO - 252 charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at hig... See More ⇒

 7.2. Size:341K  first silicon
 ftk3n80p f.pdf pdf_icon

FTK3N80I

SEMICONDUCTOR FTK3N80P / F TECHNICAL DATA Power MOSFET 3 Amps, 800 Volts N-CHANNEL MOSFET P 1 DESCRIPTION TO-220 The FTK 3N80 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F switchin... See More ⇒

Detailed specifications: FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33, FTK35N03PDFN56, FTK3610, FTK3615, FTK3620, IRFB4227, FTK3N80D, FTK3N80P, FTK3N80F, FTK4004, FTK4015D, FTK40N10D, FTK40P04D, FTK4406

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