WNM3008 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WNM3008
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.9 nS
Cossⓘ - Capacitancia de salida: 38 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de WNM3008 MOSFET
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WNM3008 datasheet
wnm3008.pdf
WNM3008 WNM3008 Http //www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi
wnm3008.pdf
Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D 3 The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch
wnm3003.pdf
WNM3003 WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 con
wnm3003.pdf
Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion an
Otros transistores... WNM2020 , WNM2021 , WNM2024 , WNM2030 , WNM2046 , WNM2046B , WNM2072 , WNM3003 , IRFB7545 , WNM3011 , WNM3013 , WNM3017 , WNM4001 , WNM4002 , WNM4006 , WNM4153 , WNM6001 .
History: WNM2030
History: WNM2030
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