WNM3008 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WNM3008
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.9 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm
   Paquete / Cubierta: SOT23

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WNM3008 Datasheet (PDF)

..1. Size:174K willsemi
wnm3008.pdf

WNM3008WNM3008Http://www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsDThe WNM3008 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi

..2. Size:86K tysemi
wnm3008.pdf

Product specificationWNM3008Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsD3The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power switch

8.1. Size:438K willsemi
wnm3003.pdf

WNM3003WNM3003N-Channel, 30V, 4.0A, Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21con

8.2. Size:208K tysemi
wnm3003.pdf

Product specificationWNM3003N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion an

8.3. Size:894K cn vbsemi
wnm3003.pdf

WNM3003www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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