WNM3008 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WNM3008
Маркировка: W38*
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.75 nC
trⓘ - Время нарастания: 2.9 ns
Cossⓘ - Выходная емкость: 38 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.062 Ohm
Тип корпуса: SOT23
WNM3008 Datasheet (PDF)
wnm3008.pdf
WNM3008WNM3008Http://www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsDThe WNM3008 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi
wnm3008.pdf
Product specificationWNM3008Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsD3The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power switch
wnm3003.pdf
WNM3003WNM3003N-Channel, 30V, 4.0A, Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21con
wnm3003.pdf
Product specificationWNM3003N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion an
wnm3003.pdf
WNM3003www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100