WNM3008 - описание и поиск аналогов

WNM3008 WNM3008 Http //www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi

Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D 3 The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch

WNM3003 WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 con

Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion an

WNM3003 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G