WNM3008 MOSFET Datasheet: N-Ch, 30V, 2.8A. Full specification with pinout and replacement list

WNM3008 Specs and Replacement

Type Designator: WNM3008

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: SOT23

WNM3008 substitution

- MOSFET ⓘ Cross-Reference Search

WNM3008 datasheet

..1. Size:174K willsemi
wnm3008.pdf pdf_icon

WNM3008 WNM3008 Http //www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi... See More ⇒

..2. Size:86K tysemi
wnm3008.pdf pdf_icon

Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D 3 The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch... See More ⇒

8.1. Size:438K willsemi
wnm3003.pdf pdf_icon

WNM3003 WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 con... See More ⇒

8.2. Size:208K tysemi
wnm3003.pdf pdf_icon

Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion an... See More ⇒