WNM3008
MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM3008
Marking Code: W38*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.75
nC
trⓘ - Rise Time: 2.9
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062
Ohm
Package:
SOT23
WNM3008
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM3008
Datasheet (PDF)
..1. Size:174K willsemi
wnm3008.pdf
WNM3008WNM3008Http://www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsDThe WNM3008 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi
..2. Size:86K tysemi
wnm3008.pdf
Product specificationWNM3008Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsD3The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power switch
8.1. Size:438K willsemi
wnm3003.pdf
WNM3003WNM3003N-Channel, 30V, 4.0A, Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21con
8.2. Size:208K tysemi
wnm3003.pdf
Product specificationWNM3003N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion an
8.3. Size:894K cn vbsemi
wnm3003.pdf
WNM3003www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
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