WNM4002 Todos los transistores

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WNM4002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WNM4002

Código: N3*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 6 V

Corriente continua de drenaje (Id): 0.6 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: SOT523

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WNM4002 Datasheet (PDF)

1.1. wnm4002.pdf Size:160K _willsemi

WNM4002
WNM4002

WNM4002 WNM4002 Small Signal N-Channel, 20V, 0.3A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Typ. D 3 1.4Ω @ 4.5V 20 V 2.2Ω @ 2.5V 1 2 3.8Ω @ 1.8V G S SOT-523 Descriptions D 3 The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

4.1. wnm4006.pdf Size:179K _willsemi

WNM4002
WNM4002

WNM4006 WNM4006 Http://www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D The WNM4006 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su

4.2. wnm4001.pdf Size:113K _willsemi

WNM4002
WNM4002

WNM4001 WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D 3 0.7 @ 4.5V 0.5A 20 V 0.85 @ 2.5V 0.3A 1 2 1.25 @ 1.8V 0.1A G S SOT-523 Descriptions D 3 The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

4.3. wnm4006.pdf Size:86K _tysemi

WNM4002
WNM4002

Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use

Otros transistores... WNM2046B , WNM2072 , WNM3003 , WNM3008 , WNM3011 , WNM3013 , WNM3017 , WNM4001 , IRF630A , WNM4006 , WNM4153 , WNM6001 , WNMD2153 , WNMD2154 , WNMD2158 , WNMD2160 , WNMD2162 .

 


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