WNM4002 - параметры транзистора MOSFET, его аналоги, datasheet

WNM4002 Datasheet (PDF)

..1. Size:160K willsemi
wnm4002.pdf pdf_icon

WNM4002WNM4002Small Signal N-Channel, 20V, 0.3A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Typ.D31.4 @ 4.5V 20 V 2.2 @ 2.5V1 23.8 @ 1.8VG SSOT-523 DescriptionsD3The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

8.1. Size:179K willsemi
wnm4006.pdf pdf_icon

WNM4006WNM4006Http://www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( )0.126@ VGS=10V0.142@ VGS=4.5V 450.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 DescriptionsDThe WNM4006 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su

8.2. Size:113K willsemi
wnm4001.pdf pdf_icon

WNM4001WNM4001Small Signal N-Channel, 20V, 0.5A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D30.7 @ 4.5V 0.5A20 V 0.85 @ 2.5V 0.3A 1 21.25 @ 1.8V 0.1A G SSOT-523 DescriptionsD3The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

8.3. Size:86K tysemi
wnm4006.pdf pdf_icon

Product specificationWNM4006Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( )0.126@ VGS=10V0.142@ VGS=4.5V 450.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 DescriptionsD3The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .